Structure and method for mobility enhanced MOSFETs with unalloyed silicide
US8217423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2007 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Sep 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
While embedded silicon germanium alloy and silicon carbon alloy provide many useful applications, especially for enhancing the mobility of MOSFETs through stress engineering, formation of alloyed silicide on these surfaces degrades device performance. The present invention provides structures and methods for providing unalloyed silicide on such silicon alloy surfaces placed on semiconductor substrates. This enables the formation of low resistance contacts for both mobility enhanced PFETs with embedded SiGe and mobility enhanced NFETs with embedded Si:C on the same semiconductor substrate. Furthermore, this invention provides methods for thick epitaxial silicon alloy, especially thick epitaxial Si:C alloy, above the level of the gate dielectric to increase the stress on the channel on the transistor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.