Semiconductor device and method of forming a semiconductor device
US8217448B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2007 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Mar 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A method of forming a semiconductor device comprises providing a semiconductor substrate, providing a semiconductor layer of a first conductivity type over the semiconductor substrate, forming a first region of the first conductivity type in the semiconductor layer, and forming a control region over the semiconductor layer and over part of the first region. A mask layer is formed over the semiconductor layer and outlines a first portion of a surface of the semiconductor layer over part of the first region. Semiconductor material of a second conductivity type is provided to the outlined first portion to provide a second region in the semiconductor layer. The first region and second region are driven into the semiconductor layer so as to form a pre-control region of the first conductivity type extending into the semiconductor layer from the surface and under a portion of the control region and a graded body region of the second conductivity type extending into the semiconductor layer under the pre-control region. A body region is formed by providing semiconductor material of the second conductivity type to the outlined first portion. The body region extends into the pre-control regio…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.