Semiconductor device and method for forming the same
US8217449B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Jul 20, 2010 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Aug 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/488
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate including an active area defined by an device isolation region, a buried gate formed on both side walls of a trench formed in the semiconductor substrate, and a storage node contact which is buried between the buried gates, and is connected to the active region of a middle portion of the trench and the device isolation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.