Semiconductor device that can adjust substrate voltage
US8217712B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2009 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Sep 3, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F1/46
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
To provide a semiconductor device including: a MOS transistor formed in a semiconductor substrate and have a threshold voltage to be adjusted, a replica transistor of the MOS transistor, a monitoring circuit monitors a gate/source voltage needed when the replica transistor flows a current having a given designed value, a negative voltage pumping circuit generates a substrate voltage of the MOS transistor, based on an output from the monitoring circuit, and a limiting circuit defines the operation of the negative voltage pumping circuit, regardless of a monitoring result of the monitoring circuit, in response to an excess of the substrate voltage with respect to a predetermined value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.