Seiji Narui
54Patents
10h-index
51Co-inventors
81Inventor score
Filing activity: Jan 13, 1997 → Dec 30, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6372554B1 | Semiconductor integrated circuit device and method for production of the same | Electricity | 77 | Expired |
| US8681578B2 | Semiconductor device that performs refresh operation | Physics | 77 | Active |
| US9412432B2 | Semiconductor storage device and system provided with same | Physics | 69 | Active |
| US6150689A | Semiconductor integrated circuit device and method for manufacturing the same | Emerging Cross-Sectional Technologies | 66 | Expired |
| US6201728A | Dynamic RAM, semiconductor storage device, and semiconductor integrated circuit device | Electricity | 36 | Expired |
| US5905685A | Dynamic memory | Physics | 24 | Expired |
| US6411543B1 | Dynamic random access memory (RAM), semiconductor storage device, and semiconductor integrated circuit (IC) device | Electricity | 23 | Expired |
| US6388941B2 | Semiconductor device | Physics | 18 | Expired |
| US6954386B2 | Boosted potential generation circuit and control method | Physics | 15 | Expired |
| US9472253B2 | Semiconductor device including spiral data path | Electricity | 11 | Active |
| US6635918B1 | Semiconductor integrated circuit device and method for manufacturing the same | Emerging Cross-Sectional Technologies | 10 | Expired |
| US10916489B1 | Memory core chip having TSVS | Electricity | 8 | Active |
| US8462560B2 | Semiconductor device, method for controlling the same, and semiconductor system | Physics | 7 | Active |
| US6563750B2 | Semiconductor memory including a circuit for selecting redundant memory cells | Physics | 6 | Expired |
| US8902691B2 | Semiconductor device having charge pump circuit and information processing apparatus including the same | Physics | 4 | Active |
| US10163469B2 | System and method for write data bus control in a stacked memory device | Physics | 4 | Active |
| US8217712B2 | Semiconductor device that can adjust substrate voltage | Physics | 4 | Active |
| US8988952B2 | Semiconductor device having ODT function | Physics | 3 | Active |
| US7875986B2 | Semiconductor device | Electricity | 3 | Active |
| US8248834B2 | Semiconductor device having hierarchically structured bit lines and system including the same | Physics | 3 | Active |
| US10964702B2 | Semiconductor device with first-in-first-out circuit | Physics | 2 | Active |
| US6924525B2 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING MEMORY CELL SECTION HAVING CAPACITOR OVER BITLINE STRUCTURE AND WITH THE MEMORY AND PERIPHERAL SECTIONS HAVING CONTACT PLUG STRUCTURES CONTAINING A BARRIER FILM AND EFFECTING ELECTRICAL CONTACT WITH MISFETS OF BOTH MEMORY AND PERIPHERAL SECTIONS | Emerging Cross-Sectional Technologies | 2 | Expired |
| US8885432B2 | Semiconductor device that performs refresh operation | Physics | 2 | Active |
| US9355705B2 | Semiconductor device, method for controlling the same, and semiconductor system | Physics | 1 | Active |
| US10885959B1 | Apparatuses and methods for semiconductor devices including clock signal lines | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.