Phase change random access memory and methods of manufacturing and operating same
US8218359B2 · kind B2 · utility
1Cited by
3References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 27, 2009 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Sep 6, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device includes a switching device, a phase change storage node connected to the switching device, and a gate electrode which is spaced apart from the phase change storage node and increases an electrical resistance of the storage node during a reset programming operation. The gate electrode may be disposed around the phase change storage node, and may be used for applying an electric field to the phase change storage node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.