Semiconductor inter-field dose correction
US8219938B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2009 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Oct 19, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70558
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and apparatus are provided for adapting a semiconductor inter-field dose correction map from a first photolithography mask to a second photolithography mask using the same manufacturing stack and reactive ion etching processes, the method including: obtaining a first dose correction map for the first photolithography mask as a function of first chip or die identities; determining a first transformation matrix from the first chip or die identities of the first photolithography mask into an orthogonal coordinate system; determining a second transformation matrix from second chip or die identities of the second photolithography mask into the orthogonal coordinate system; and transforming the first dose correction map for the first photolithography mask into a second dose correction map for the second photolithography mask in correspondence with each of the first and second transformation matrices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.