Dong-Hee Yu
5Patents
2h-index
14Co-inventors
37Inventor score
Filing activity: Mar 12, 2009 → Oct 21, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8633520B2 | Semiconductor device | Electricity | 7 | Active |
| US7863201B2 | Methods of forming field effect transistors having silicided source/drain contacts with low contact resistance | Electricity | 2 | Active |
| US8350235B2 | Semiconductor intra-field dose correction | Physics | 1 | Active |
| US8219938B2 | Semiconductor inter-field dose correction | Physics | 0 | Active |
| US8030196B2 | Transistor formation using capping layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.