Procedure for in-situ determination of thermal gradients at the crystal growth front
US8221545B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 31, 2008 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Apr 23, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1072
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.