Methods of atomic layer deposition using titanium-based precursors
US8221852B2 · kind B2 · utility
7Cited by
4References
16Claims
0Family size
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Key dates
| Filing date | Sep 10, 2008 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Nov 7, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.