Method and system for fracturing a pattern using charged particle beam lithography with multiple exposure passes having different dosages
US8221939B2 · kind B2 · utility
18Cited by
7References
25Claims
0Family size
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Key dates
| Filing date | Dec 26, 2009 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Oct 11, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each other. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, with base dosage levels being different for different exposure passes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.