Patent · US Active

Fiducial scheme adapted for stacked integrated circuits

US8222121B2 · kind B2 · utility

4Cited by
7References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 11, 2011
Grant dateJul 17, 2012
Priority date
Expiry dateJan 11, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/14
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for stacking integrated circuit substrates and the substrates used therein are disclosed. In the method, an integrated circuit substrate having top and bottom surfaces is provided. The substrate is divided vertically into a plurality of layers including an integrated circuit layer having integrated circuit elements constructed therein and a buffer layer adjacent to the bottom surface. An alignment fiducial mark extending from the top surface of the wafer into the substrate to a depth below that of the circuit layer is constructed. The vias are arranged in a pattern that provides a fiducial mark when viewed from the bottom surface of the substrate. The pattern can be chosen such that it is recognized by a commercial stepper/scanner/contact mask aligner when viewed from said backside of said wafer. After the substrate is thinned, the alignment fiducial mark is then used to position a mask used in subsequent processing.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.