Reworking method for integrated circuit devices
US8222143B2 · kind B2 · utility
1Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2007 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Jun 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A reworking method for integrated circuit devices includes the following: providing a substrate having a first base layer and a first dielectric layer formed thereon, performing a first dry etching process to remove the first dielectric layer, performing a CMP process to remove the first base layer, and sequentially reforming a second base layer and a second dielectric layer on the substrate. When certain layers on the IC device have hailed an inspection or when quality defects are found, the defective layer is removed according to the provided reworking method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.