Patent · US Active

Protection circuit and operating method thereof

US8222700B2 · kind B2 · utility

2Cited by

2References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Marcus Gehle · Finkenstein, AT
Uwe Weder · Freiburg im Breisgau, DE

Key dates

Filing date	Jan 5, 2007
Grant date	Jul 17, 2012
Priority date	—
Expiry date	Nov 27, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3011
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor component including a semiconductor substrate, a doped well formed in the semiconductor substrate, transistor structures arranged in the doped well, and an integrated circuit connected to the doped well, wherein the integrated circuit intermittently charges the doped well to a provided electrical potential, ascertains a deviation of the potential present at the doped well from the provided potential, and triggers an alarm signal in the event of a specific deviation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.