Magnetic field assisted STRAM cells
US8223532B2 · kind B2 · utility
5Cited by
91References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2008 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | May 11, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1659
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.