Magnetoresistive effect device and magnetic memory
US8223533B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2009 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Dec 3, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/123
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.