Raising programming currents of magnetic tunnel junctions using word line overdrive and high-k metal gate
US8223534B2 · kind B2 · utility
35Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Jan 14, 2010 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Sep 27, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1659
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.