Efficient re-read operations from memory devices
US8225181B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2008 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | May 9, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/0411
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for data storage includes storing data, which is encoded with an Error Correction Code (ECC), in a group of analog memory cells by writing respective first storage values to the memory cells in the group. After storing the data, respective second storage values are read from the memory cells in the group, and the read second storage values are processed so as to decode the ECC. Responsively to a failure in decoding the ECC, one or more of the second storage values that potentially caused the failure are identified as suspect storage values. Respective third storage values are re-read from a subset of the memory cells that includes the memory cells holding the suspect storage values. The ECC is re-decoded using the third storage values so as to reconstruct the stored data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.