Uri Perlmutter
67Patents
17h-index
43Co-inventors
80Inventor score
Filing activity: Sep 7, 2006 → Sep 2, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8259506B1 | Database of memory read thresholds | Physics | 140 | Active |
| US8429498B1 | Dual ECC decoder | Physics | 82 | Active |
| US8369141B2 | Adaptive estimation of memory cell read thresholds | Physics | 68 | Active |
| US8169825B1 | Reliable data storage in analog memory cells subjected to long retention periods | Physics | 65 | Active |
| US8000135B1 | Estimation of memory cell read thresholds by sampling inside programming level distribution intervals | Physics | 64 | Active |
| US8572311B1 | Redundant data storage in multi-die memory systems | Physics | 58 | Active |
| US8924661B1 | Memory system including a controller and processors associated with memory devices | Physics | 47 | Active |
| US8228701B2 | Selective activation of programming schemes in analog memory cell arrays | Physics | 42 | Active |
| US8261159B1 | Data scrambling schemes for memory devices | Physics | 34 | Active |
| US9991913B1 | Discrete levels envelope tracking | Electricity | 32 | Active |
| US8677203B1 | Redundant data storage schemes for multi-die memory systems | Physics | 30 | Active |
| US7924587B2 | Programming of analog memory cells using a single programming pulse per state transition | Physics | 22 | Active |
| US8238157B1 | Selective re-programming of analog memory cells | Physics | 21 | Active |
| US8225181B2 | Efficient re-read operations from memory devices | Physics | 21 | Active |
| US8059457B2 | Memory device with multiple-accuracy read commands | Physics | 19 | Active |
| US7864573B2 | Programming analog memory cells for reduced variance after retention | Physics | 19 | Active |
| US8230300B2 | Efficient readout from analog memory cells using data compression | Physics | 17 | Active |
| US8174905B2 | Programming orders for reducing distortion in arrays of multi-level analog memory cells | Physics | 16 | Active |
| US8174857B1 | Efficient readout schemes for analog memory cell devices using multiple read threshold sets | Physics | 16 | Active |
| US8429493B2 | Memory device with internal signap processing unit | Electricity | 13 | Active |
| US8713330B1 | Data scrambling in memory devices | Physics | 12 | Active |
| US8482978B1 | Estimation of memory cell read thresholds by sampling inside programming level distribution intervals | Physics | 12 | Active |
| US8397131B1 | Efficient readout schemes for analog memory cell devices | Physics | 12 | Active |
| US8208304B2 | Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N | Physics | 11 | Active |
| US8437185B2 | Programming orders for reducing distortion based on neighboring rows | Physics | 11 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.