Method of producing semiconductor device using resist underlayer film by photo-crosslinking curing
US8227172B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2007 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Aug 27, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/128
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a resist underlayer film forming composition used in a lithography process for producing semiconductor devices. A method of producing a semiconductor device comprising: forming a coating film by applying a resist underlayer film forming composition containing a polymer, a crosslinker and a photoacid generator on a semiconductor substrate; forming an underlayer film by irradiating light to the coating film; and forming a photoresist by applying a photoresist composition on the underlayer film and heating the resultant layer. The polymer polymer is a polymer having a benzene ring or a hetero ring in a main chain or a side chain bonded to the main chain, and the content rate of a benzene ring in the polymer is 30 to 70% by mass. The polymer may be a polymer containing a lactone structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.