Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device
US8227277B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2011 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Oct 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.