Method and structure of monolithetically integrated inertial sensor using IC foundry-compatible processes
US8227285B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 3, 2010 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Jul 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention relates to integrating an inertial mechanical device on top of a CMOS substrate monolithically using IC-foundry compatible processes. The CMOS substrate is completed first using standard IC processes. A thick silicon layer is added on top of the CMOS. A subsequent patterning step defines a mechanical structure for inertial sensing. Finally, the mechanical device is encapsulated by a thick insulating layer at the wafer level. Comparing to the incumbent bulk or surface micromachined MEMS inertial sensors, the vertically monolithically integrated inertial sensors have smaller chip size, lower parasitics, higher sensitivity, lower power, and lower cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.