Single crystal silicon sensor with additional layer and method of producing the same
US8227286B2 · kind B2 · utility
4Cited by
7References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 6, 2011 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Jan 6, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P15/125
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A SOI-based MEMS device has a base layer, a device layer, and an insulator layer between the base layer and the device layer. The device also has a deposited layer having a portion that is spaced from the device layer. The device layer is between the insulator layer and the deposited layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.