Image sensor and method of fabricating same

US8227288B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Wen-De Wang · Guoxing Township, TW
• Dun-Nian Yaung · Taipei, TW
• Jen-Cheng Liu · Baoshan, TW
• Chun-Chieh Chuang · Tainan, TW
• Jeng-Shyan Lin · Tainan, TW

Key dates

• Filing date: Mar 30, 2009
• Grant date: Jul 24, 2012
• Expiry date: Sep 19, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/811

Abstract

Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.