Semiconductor device and method of manufacturing the same
US8227341B2 · kind B2 · utility
2Cited by
1References
7Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 23, 2009 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Dec 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object is to prevent a failure, such as a wiring separation or a crack, in an insulating film under a copper wire, in a semiconductor device formed by wire-bonding the copper wire on a portion above the copper wiring. A semiconductor device according to the present invention includes a copper wiring formed above a semiconductor substrate, a plated layer formed so as to cover a top surface and side surfaces of the copper wiring, and a copper wire which is wire-bonded on the plated layer above the copper wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.