Method and apparatus of fabricating semiconductor device
US8227355B2 · kind B2 · utility
3Cited by
9References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 28, 2006 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Dec 24, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/908
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An underlying film forming section forming an underlying film on a semiconductor substrate is provided to an apparatus of fabricating a semiconductor device. The apparatus is further provided with a cooling section cooling the semiconductor substrate and a plasma nitriding section introducing active nitrogen into the underlying film while keeping the temperature of the semiconductor substrate cooled by the cooling section at 100° C. or below. The semiconductor substrate is cooled by using liquid nitrogen or liquid helium, and by cooling a stage on which the semiconductor substrate is placed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.