Resistance change element and method of manufacturing the same
US8227782B2 · kind B2 · utility
3Cited by
11References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 18, 2009 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Jun 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
In a resistance change memory (ReRAM) storing data by utilizing change in resistance of a resistance change element, a lower electrode (ground-side electrode) of the resistance change element is formed of a transition metal such as Ni, and an upper electrode (positive polarity-side electrode) is configured of a noble metal such as Pt. In addition, a transition metal oxide film between the lower electrode and the upper electrode is formed of an oxide film (NiOx film) of a transition metal that is of the same kind as the transition metal constituting the lower electrode, for example.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.