Patent · US Active

Elevated LED

US8227817B2 · kind B2 · utility

11Cited by
42References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 22, 2007
Grant dateJul 24, 2012
Priority date
Expiry dateMar 17, 2028

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/762
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.