Semiconductor device having a junction FET and a MISFET for control
US8227831B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 2, 2010 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Jan 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a junction FET having improved characteristics is provided. The semiconductor device has a junction FET as a main transistor and has a MISFET as a transistor for control. The junction FET has a first gate electrode, a first source electrode, and a first drain electrode. The MISFET has a second gate electrode, a second source electrode, and a second drain electrode. The MISFET is an n-channel type MISFET and has electric characteristics of an enhancement mode MISFET. The second gate electrode and the second drain electrode of the MISFET are connected to each other by short-circuiting. The first gate electrode of the junction FET and the second source electrode of the MISFET are connected to each other by short-circuiting.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.