Patent · US Active

Dielectric film and layer testing

US8228090B2 · kind B2 · utility

0Cited by

9References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Andreas Martin · Salzburg, AT
Karl-Henrik Rydén · Germering, DE
Andrea Mitchell · Munich, DE

Key dates

Filing date	Apr 11, 2011
Grant date	Jul 24, 2012
Priority date	—
Expiry date	Apr 11, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/34
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A system for testing and a method for making a semiconductor device is disclosed. A preferred embodiment includes a conductor overlying a dielectric layer. The conductor is coupled to a first test pad via a first conducting line and to a second test pad via a second conducting line.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.