Patent · US Active

Semiconductor package and camera module

US8228426B2 · kind B2 · utility

6Cited by
6References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 29, 2009
Grant dateJul 24, 2012
Priority date
Expiry dateMay 30, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/13091
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A semiconductor package includes a solid-state imaging element, electrode pad, through-hole electrode, and light-transmitting substrate. The solid-state imaging element is formed on the first main surface of a semiconductor substrate. The electrode pad is formed on the first main surface of the semiconductor substrate. The through-hole electrode is formed to extend through the semiconductor substrate between the first main surface and a second main surface opposite to the electrode pad formed on the first main surface. The light-transmitting substrate is placed on a patterned adhesive to form a hollow on the solid-state imaging element. The thickness of the semiconductor substrate below the hollow when viewed from the light-transmitting substrate is larger than that of the semiconductor substrate below the adhesive.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.