Ultimate magnetic random access memory-based ternary cam
US8228702B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2010 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Jan 15, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C15/046
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure concerns a magnetic random access memory-based ternary content addressable memory cell, comprising a first and second magnetic tunnel junction respectively connected to a first and second straps extending on each side of the first and second magnetic tunnel junctions, respectively; a first and second selection transistors, respectively connected to one extremity of the first and second straps; a first and second current lines; and a conductive line electrically connecting in series the first and second magnetic tunnel junctions at their ends opposed to the ones connecting the first and second straps. The cell disclosed herein has smaller size and can be advantageously used in memory devices having a high cell density array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.