Ternary Content Addressable Magnetoresistive random access memory cell
US8228703B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2009 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Oct 2, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C15/046
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for writing a magnetic random access memory-based ternary content addressable memory cell comprising a first magnetic tunnel junction being formed from a storage layer, a sense layer having a magnetization direction adjustable relative to the magnetization of the storage layer, and an insulating layer between the storage and sense layers; a sense line coupled with the storage layer; a first field line and a second field line, and the first field line being orthogonal to the second field line; comprising: providing a first write data to said storage layer via the second field line to store a first stored data with a high or low logic state; characterized in that, the method further comprises providing the first write data to said storage layer via the first field line to store the first stored data with a masked logic state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.