Patent · US Active

Crystal growth apparatus and method

US8231727B2 · kind B2 · utility

0Cited by
53References
21Claims
0Family size

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Inventors

Key dates

Filing dateApr 17, 2008
Grant dateJul 31, 2012
Priority date—
Expiry dateJan 29, 2031

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T117/1068
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Systems and methods are disclosed for crystal growth using VGF and VB growth processes to reduce body lineage. In one exemplary embodiment, there is provided a method of inserting an ampoule with raw material into a furnace having a heating source, growing a crystal using a vertical gradient freeze process wherein the crystallizing temperature gradient is moved relative to the crystal and/or furnace to melt the raw material and reform it as a monocrystalline compound, and growing the crystal using a vertical Bridgman process on the wherein the ampoule/heating source are moved relative each other to continue to melt the raw material and reform it as a monocrystalline compound.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.