Silicon wafer and method for producing the same
US8231852B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2010 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Aug 4, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/005
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
It is possible to provide a silicon wafer that as well as being free of COPs and dislocation clusters, has defects (grown-in defects including silicon oxides), which are not overt in an as-grown state, such as OSF nuclei and oxygen precipitate nuclei existing in the PV region, to be vanished or reduced, by adopting a method for producing a silicon wafer, the method comprising the steps of: growing a single crystal silicon ingot by the Czochralski method; cutting a silicon wafer out of the ingot; subjecting the wafer to an RTP at 1,250° C. or more for 10 seconds or more in an oxidizing atmosphere; and removing a grown-in defect region including silicon oxides in the vicinity of wafer surface layer after the RTP.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.