Removing method of a hard mask
US8232152B2 · kind B2 · utility
1Cited by
0References
8Claims
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Assignee
Inventors
Key dates
| Filing date | Sep 16, 2010 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Sep 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0147
Abstract
A removing method of a hard mask includes the following steps. A substrate is provided. At least two MOSFETs are formed on the substrate. An isolating structure is formed in the substrate and located between the at least two MOSFETs. Each of the MOSEFTs includes a gate insulating layer, a gate, a spacer and a hard mask on the gate. A protecting structure is formed on the isolating structure and the hard mask is exposed from the protecting structure. The exposed hard mask is removed to expose the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.