Compensated isolated p-well DENMOS devices

US8232158B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Kamel Benaissa · Garland, US
• Greg Baldwin · Plano, US
• Vineet Mishra · Bengaluru, IN
• Ananth Kamath · Kanchinakote, IN

Key dates

• Filing date: Jun 28, 2010
• Grant date: Jul 31, 2012
• Expiry date: Jan 15, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/856

Abstract

An integrated circuit with a core PMOS transistor formed in a first n-well and an isolated DENMOS (iso-DENMOS) transistor formed in a second n-well where the depth and doping of the first and second n-wells are the same. A method of forming an integrated circuit with a core PMOS transistor formed in a first n-well and an iso-DENMOS transistor formed in a second n-well where the depth and doping of the first and second n-wells are the same.