Dielectric film manufacturing method
US8232189B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2010 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Apr 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a manufacturing method of a dielectric film which reduces a leak current value while suppressing the reduction of a relative permittivity, suppresses the reduction of a deposition rate caused by the reduction of a sputtering rate, and also provides excellent planar uniformity. A dielectric film manufacturing method according to an embodiment of the present invention is forms a dielectric film of a metal oxide mainly containing Al, Si, and O on a substrate, and comprises steps of forming the metal oxide having an amorphous structure in which a molar fraction between an Al element and a Si element, Si/(Si+Al), is 0<Si/(Si+Al)≦0.1, and subjecting the metal oxide having the amorphous structure to annealing treatment at a temperature of 1000° C. or more to form the metal oxide including a crystalline phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.