Stabilized chemical mechanical polishing composition and method of polishing a substrate

US8232208B2 · kind B2 · utility

Assignee

• Rohm and Haas Electronic Materials CMP Holdings, Inc. · US

Inventors

• Yi Guo · Shanghai, CN
• Zhendong Liu · Newark, US
• Kancharla-Arun Kumar Reddy · Wilmington, US
• Guangyun Zhang · Furlong, US

Key dates

• Filing date: Jun 15, 2010
• Grant date: Jul 31, 2012
• Expiry date: Feb 8, 2031

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C09K3/1463
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 40 wt % abrasive having an average particle size of 5 to 150 nm; 0.001 to 1 wt % of an adamantyl substance according to formula (II); 0 to 1 wt % diquaternary substance according to formula (I); and, 0 to 1 wt % of a quaternary ammonium compound. Also, provided is a method for chemical mechanical polishing using the chemical mechanical polishing composition.