Avalanche impact ionization amplification devices
US8232516B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2009 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Sep 17, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.