Light-emitting diode in semiconductor material

US8232560B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Ivan-Christophe Robin · Grenoble, FR
• Pierre Ferret · Grenoble, FR
• Johan Rothman · Grenoble, FR

Key dates

• Filing date: Jul 15, 2009
• Grant date: Jul 31, 2012
• Expiry date: Jul 15, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/918

Abstract

A light-emitting diode including: a structure in a semiconductor material of first conductivity type, wherein the structure has a first face of which a first region is in contact with a pad of semiconductor material having a second conductivity type opposite the first conductivity type, and the diode further includes a first electric contact on the pad, a second electric contact-on the first face or on a second face of the structure, and a gate in electrically conductive material arranged on a second region of the first face and separated from the first face by an electrically insulating layer.