High quality gate dielectric for semiconductor devices and method of formation thereof

US8232611B2 · kind B2 · utility

Assignee

• Group IV Semiconductor, Inc. · CA

Inventors

• Carla Miner · Carp, CA
• Thomas MacElwee · Ottawa, CA
• Marwan Albarghouti · Loudonville, US

Key dates

• Filing date: Jun 14, 2010
• Grant date: Jul 31, 2012
• Expiry date: Jan 1, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B41/30

Abstract

Improved high quality gate dielectrics and methods of preparing such dielectrics are provided. Preferred dielectrics comprise a rare earth doped dielectric such as silicon dioxide or silicon oxynitride. In particular, cerium doped silicon dioxide shows an unexpectedly high charge-to-breakdown QBD, believed to be due to conversion of excess hot electron energy as photons, which reduces deleterious hot electron effects such as creation of traps or other damage. Rare earth doped dielectrics therefore have particular application as gate dielectrics or gate insulators for semiconductor devices such as floating gate MOSFETs, as used in as flash memories, which rely on electron injection and charge transfer and storage.