Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor
US8232817B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 4, 2010 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Jun 10, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2831
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure provides methods and apparatus that enable characterization of an electrical property of a semiconductor specimen, e.g., dopant concentration of a near-surface region of the specimen. In exemplary method, a target depth for measurement is selected. This thickness may, for example, correspond to a nominal production thickness of a thin active device region of the specimen. A light is adjusted to an intensity selected to characterize a target region of the specimen having a thickness no greater than the target depth and a surface of the specimen is illuminated with the light. An AC voltage signal induced in the specimen by the light is measured and this AC voltage may be used to quantify an aspect of the electrical property, e.g., to determine dopant concentration, of the target region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.