Magnetic tunnel junction transistor device
US8233249B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 4, 2010 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Jan 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3286
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnel junction transistor (MTJT) device includes a source-drain region comprising a source electrode and a drain electrode, a double MTJ element formed between the source electrode and the drain electrode and comprising a free magnetic layer at a center region thereof, and a gate region adjacent to the source-drain region and comprising an insulating barrier layer formed on an upper layer of the double MTJ element and a gate electrode formed on the insulating barrier layer. The MTJT device switches a magnetization orientation of the free magnetic layer by application of a gate voltage to the gate electrode, thereby changing a resistance of the source-drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.