Patent · US Active

Phase change memory device suitable for high temperature operation

US8233317B2 · kind B2 · utility

7Cited by

24References

19Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Matthew J. Breitwisch · Yorktown Heights, US
Chung H. Lam · Williston, US
Bipin Rajendran · Yorktown Heights, US
Simone Raoux · New York, US
Alejandro G. Schrott · New York, US
Daniel Krebs · Aufhausen, DE

Key dates

Filing date	Nov 16, 2009
Grant date	Jul 31, 2012
Priority date	—
Expiry date	Feb 5, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG11C7/04
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A phase change memory cell that includes a bottom electrode, a top electrode separated from the bottom electrode, and growth-dominated phase change material deposited between the bottom electrode and the top electrode and contacting the bottom electrode and the top electrode and surrounded by insulation material at sidewalls thereof. The phase change memory cell in a reset state only includes an amorphous phase of the growth-dominated phase change material within an active volume of the phase change memory cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.