Multiple exposure photolithography methods and photoresist compositions
US8236476B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2008 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Apr 11, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and a composition are provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.