Method of forming resist pattern
US8236483B2 · kind B2 · utility
5Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2009 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Aug 6, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a resist pattern including: forming a resist film on a substrate using a chemically amplified negative resist composition; forming a latent image of a first line and space pattern by subjecting the resist film to first exposure through a photomask; forming a latent image of a second line and space pattern so as to intersect with the latent image of the first line and space pattern by subjecting the resist film to second exposure through a photomask; and subjecting the resist film to developing to form a hole pattern in the resist film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.