Patent · US Active

Copper contamination detection method and system for monitoring copper contamination

US8236580B2 · kind B2 · utility

0Cited by

3References

16Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Jay Burnham · Fletcher, US
Joseph K. V. Comeau · South Burlington, US
Leslie Peter Crane · Williston, US
James R. Elliott · South Burlington, US
Scott A. Estes · Saint Johnsbury Center, US
James S. Nakos · Saint Johnsbury Center, US
Eric J. White · Vergennes, US

Key dates

Filing date	Dec 20, 2010
Grant date	Aug 7, 2012
Priority date	—
Expiry date	Dec 20, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/12
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of monitoring copper contamination. The method includes method, comprising: (a) ion-implanting an N-type dopant into a region of single-crystal silicon substrate, the region abutting a top surface of the substrate; (c) activating the N-type dopant by annealing the substrate at a temperature of 500° C. or higher in an inert atmosphere; (c) submerging, for a present duration of time, the substrate into an aqueous solution, the aqueous solution to be monitored for copper contamination; and (d) determining an amount of copper adsorbed from the aqueous solution by the region of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.