Method of separating light-emitting diode from a growth substrate
US8236583B2 · kind B2 · utility
3Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2009 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Oct 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.