Joining method for preparing an inverted metamorphic multijunction solar cell
US8236600B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 10, 2008 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Mar 14, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of manufacturing a solar cell by providing a first semiconductor substrate and depositing a first sequence of layers of semiconductor material to form a first solar subcell, including a first bond layer disposed on the top of the first sequence of layers. A second semiconductor substrate is provided, and on the top surface of the second substrate a second sequence of layers of semiconductor material is deposited forming at least a second solar subcell. A second bond layer is disposed on the top of said second sequence of layers. The first solar subcell is mounted on top of the second solar subcell by joining the first bond layer to the second bond layer in an ultra high vacuum chamber, and the first semiconductor substrate is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.